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2SK2513 Datasheet

  • 2SK2513

  • TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 45A I(D) | ...

  • 8頁(yè)

  • ETC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2513, 2SK2513-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2513, 2SK2513-Z is N-Channel MOS Field Effect Tran-
sistor designed for high current switching applications.
3.0 鹵 0.3
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
3.6 鹵 0.2
10.0
5.9 MIN.
12.7 MIN. 15.5 MAX.
4.8 MAX.
1.3 鹵 0.2
FEATURES
鈥?/div>
Low On-Resistance
R
DS(on)1
= 15 m鈩?(V
GS
= 10 V, I
D
= 23 A)
R
DS(on)2
= 23 m鈩?(V
GS
= 4 V, I
D
= 23 A)
4
1 2 3
6.0 MAX.
鈥?/div>
Low C
iss
C
iss
= 2 100 pF TYP
.
鈥?/div>
Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 藲C)
Total Power Dissipation (T
A
= 25 藲C)
Channel Temperature
Storage Temperature
*
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
60
鹵20
鹵45
鹵180
75
1.5
150
V
V
A
A
W
W
藲C
1.3 鹵 0.2
0.75 鹵 0.1
2.54
0.5 鹵 0.2
2.8 鹵 0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4
1.0 鹵 0.5
8.5 鹵 0.2
1.5 MAX.
4.8 MAX.
1.3 鹵 0.2
鈥?5 to +150 藲C
1.4 鹵 0.2
1.0 鹵 0.3
(2.54) (2.54)
1 2 3
1.1 鹵 0.4
3.0 鹵 0.5
R) )
.5 8R
(0 0.
(
0.5 鹵 0.2
MP-25Z (SURFACE MOUNT TYPE)
Drain
2.8 鹵 0.2
1.
2.
3.
4.
Gate
Drain
Source
Fin (Drain)
Body
Diode
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Document No. D10292EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
Gate
Gate Protection
Diode
Source
漏
1995

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