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2SK2412-AZ Datasheet

  • 2SK2412-AZ

  • 暫無描述

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2412
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2412 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 鹵0.3
4.5 鹵0.2
3.2 鹵0.2
2.7 鹵0.2
FEATURES
鈥?/div>
Low On-Resistance
R
DS(on)1
= 70 m鈩?MAX. (@ V
GS
= 10 V, I
D
= 10 A)
15.0 鹵0.3
3 鹵0.1
4 鹵0.2
12.0 鹵0.2
13.5
MIN.
R
DS(on)2
= 95 m鈩?MAX. (@ V
GS
= 4 V, I
D
= 10 A)
鈥?/div>
Low C
iss
C
iss
= 860 pF TYP.
鈥?/div>
Built-in G-S Gate Protection Diodes
鈥?/div>
High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
0.7 鹵0.1
2.54
1.3 鹵0.2
1.5 鹵0.2
2.54
0.65 鹵0.1
2.5 鹵0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
60
鹵20
鹵20
鹵80
30
2.0
150
20
22.5
V
V
A
A
W
W
藲C
A
mJ
Gate
1 2 3
1. Gate
2. Drain
3. Source
MP-45F(ISOLATED TO-220)
Drain
Total Power Dissipation (T
c
= 25 藲C) P
T1
Total Power Dissipation (T
A
= 25 藲C) P
T2
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
T
ch
T
stg
I
AS
E
AS
鈥?5 to +150 藲C
Body
Diode
Gate Protection
Diode
Source
**
Starting T
ch
= 25 藲C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0
The information in this document is subject to change without notice.
Document No. TC-2493
(O. D. No. TC-8031)
Date Published November 1994 P
Printed in Japan
漏
1994

2SK2412-AZ 產(chǎn)品屬性

  • 70 ns

  • 15 ns

  • 27 nC V @ 10

  • 860 pF V @ 10

  • 通孔

  • 4.5mm

  • TO-220

  • 10 x 4.5 x 9mm

  • 3

  • -55 °C

  • 2000 mW

  • ±20 V

  • 60 V

  • 0.07

  • 20 A

  • +150 °C

  • 1

  • 功率 MOSFET

  • 增強(qiáng)

  • N

  • 單

  • 10mm

  • 9mm

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