designed for high voltage switching applications.
15.7 MAX.
4.7 MAX.
鈩?/div>
(V
GS
= 13 V, I
D
= 10 A)
鈥?Low C
iss
C
iss
= 3600 pF TYP.
鈥?High Avalanche Capability Ratings
1
3.0 鹵 0.2
2
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄C)
Drain to Source Voltage (2SK2371/2SK2372) V
DSS
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
C
= 25
擄C)
Total Power Dissipation (T
a
= 25
擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
* PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
** Starting T
ch
= 25
擄C,
R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0
19 MIN.
450/500
鹵30
鹵25
鹵100
160
3.0
150
鈥?5 ~ +150
25
446
V
V
A
A
W
W
擄C
擄C
A
mJ
2.2 鹵 0.2
5.45
1.0 鹵 0.2
5.45
4.5 鹵 0.2
2SK2367: R
DS(ON)
= 0.25
鈩?/div>
(V
GS
= 13 V, I
D
= 10 A)
6.0
0.6 鹵 0.1
2.8 鹵 0.1
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
MP-88
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Drain
Gate
Body
Diode
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Source
Document No. TC-2505
(O.D. No. TC-8064
Date Published January 1995 P
Printed in Japan
漏
1995
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