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2SK2353 Datasheet

  • 2SK2353

  • SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2353/2SK2354
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 鹵0.3.
3.2 鹵0.2
2.7 鹵0.2
4.5 鹵0.2
FEATURES
鈥?/div>
Low On-Resistance
2SK2353: R
DS(on)
= 1.4
鈩?/div>
(V
GS
= 10 V, I
D
= 2.5 A)
2SK2354: R
DS(on)
= 1.5
鈩?/div>
(V
GS
= 10 V, I
D
= 2.5 A)
鈥?/div>
Low C
iss
C
iss
= 670 pF TYP.
鈥?/div>
High Avalanche Capability Ratings
鈥?/div>
Isolate TO-220 Package
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
15.0 鹵0.3
4 鹵0.2
0.7 鹵0.1
2.54
1.3 鹵0.2
1.5 鹵0.2
2.54
13.5 MIN.
12.0 鹵0.2
3 鹵0.1
2.5 鹵0.1
0.65 鹵0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage (2SK2353/2354) V
DSS
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 藲C)
Total Power Dissipation (T
a
= 25 藲C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
450/500
鹵30
鹵4.5
鹵18
30
2.0
150
4.5
17.4
V
V
A
A
W
W
藲C
A
mJ
Gate
1
2 3
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
鈥?5 to +150 藲C
Body
Diode
Source
**
Starting T
ch
= 25 藲C, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0
The information in this document is subject to change without notice.
Document No. TC-2499
(O. D. No. TC-8047)
Date Published November 1994 P
Printed in Japan
漏
1994

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