Ordering number : EN5415A
N-Channel Silicon MOSFET
2SK2348
High-Voltage, High-Speed
Switching Applications
Features
鈥?Low ON resistance, ultrahigh-speed switching.
鈥?High reliability (Adoption of HVP process).
Package Dimensions
unit: mm
2131-TO-3JML
[2SK2348]
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
1 : Gate
2 : Drain
3 : Source
SANYO: TO-3JML
PW鈮?0碌s, duty cycle鈮?%
Tc=25擄C
Ratings
1200
鹵30
14
28
4.6
160
150
鈥?5 to +150
Unit
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
at Ta=25擄C
Parameter
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to Source Leak Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source
ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0
VDS=1200V, VGS=0
VGS=鹵30V, VDS=0
VDS=10V, ID=1mA
VDS=20V, ID=7A
ID=7A, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
Ratings
min
1200
typ
max
1.0
鹵100
3.5
6.0
1.0
3000
500
250
1.5
Unit
V
mA
nA
V
S
鈩?/div>
pF
pF
pF
1.5
3.0
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
72597TS (KOTO) TA-1033 No.5415-1/4
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