Power F-MOS FETs
2SK2339
2SK2339
Silicon N-Channel Power F-MOS
s
Features
q
Avalanche
q
Low
q
No
Unit : mm
8.5鹵0.2
3.4鹵0.3
1.0鹵0.1
energy capability guaranteed
6.0鹵0.5
ON-resistance
10.0鹵0.3
secondary breakdown
drive
1.5鹵0.1
q
Low-voltage
s
Applications
10.5min.
1.5max.
2.0
1.1max.
q
Non-contact
q
Solenoid
q
Motor
relay
drive
0.8鹵0.1
0.5max.
drive
equipment
mode regulator
2.54鹵0.3
5.08鹵0.5
1
2
3
q
Control
q
Switching
s
Absolute Maximum Ratings
(Tc = 25藲C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
T
C
= 25藲C
Ta= 25藲C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Rating
80鹵10
鹵15
鹵10
鹵20
62.5
30
1.3
150
鈥?5 to +150
Unit
V
V
A
A
mJ
W
藲C
藲C
S
G
1 : Gate
2 : Collector
3 : Emitter
N Type Package
s
Equivalent Circuit
D
Avalanche energy capability
Allowable power
dissipation
Channel temperature
Storage temperature
* L= 5mH, I
L
= 5A, 1 pulse
s
Electrical Characteristics
(Tc = 25藲C)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
1
R
DS(on)
2
| Y
fs
|
V
DSF
t
rr
Q
rr
C
iss
C
oss
C
rss
t
on
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
V
DD
= 30V, I
D
= 5A
V
GS
=10V, R
L
= 6鈩?/div>
V
DS
=10V, V
GS
= 0, f= 1MHz
Condition
V
DS
= 70V, V
GS
= 0
V
DS
= 0, V
GS
=15V
I
D
=1mA, V
GS
= 0
V
DS
=10V, I
D
=1mA
V
GS
=10V, I
D
= 5A
V
GS
= 4V, I
D
= 5A
V
DS
=10V, I
D
= 5A
I
DR
=10A, V
GS
= 0
L=230碌 H, V
DD
= 30V, V
GS
= 0
I
DR
=10A, di/dt= 80A/碌 s
0.55
2.2
85
250
20
0.5
0.9
1.9
4.2
96
3
70
1
150
230
5.5
鈥?.8
Min
Typ
Max
10
鹵10
90
2.5
230
370
Unit
碌A(chǔ)
碌A(chǔ)
V
V
m鈩?/div>
m鈩?/div>
S
V
碌s
碌s
pF
pF
pF
碌s
碌s
碌s
藲C/W
藲C/W
1
2
3
