Power F-MOS FETs
2SK2327
Silicon N-Channel Power F-MOS FET
s
Features
q
Avalanche energy capacity guaranteed
q
High-speed switching
q
Low ON-resistance
q
No secondary breakdown
unit: mm
15.5鹵0.5
4.5
蠁3.2鹵0.1
10.0
3.0鹵0.3
s
Applications
q
Contactless relay
q
Diving circuit for a solenoid
q
Driving circuit for a motor
q
Control equipment
q
Switching power supply
5藲
26.5鹵0.5
5藲
23.4
22.0鹵0.5
2.0 1.2
5藲
18.6鹵0.5
5藲
5藲
4.0
2.0鹵0.2
1.1鹵0.1
2.0
0.7鹵0.1
s
Absolute Maximum Ratings
(T
C
= 25擄C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
600
鹵30
鹵10
鹵20
100
100
3
150
鈭?5
to +150
Unit
V
V
5.45鹵0.3
3.3鹵0.3
0.7鹵0.1
5.45鹵0.3
5.5鹵0.3
5藲
1
2
3
A
A
mJ
W
擄C
擄C
1: Gate
2: Drain
3: Source
TOP-3E Package
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
T
C
= 25擄C
Ta = 25擄C
L = 2mH, I
L
= 10A, 1 pulse
s
Electrical Characteristics
(T
C
= 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
oss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
V
DD
= 200V, I
D
= 5A
V
GS
= 10V, R
L
= 40鈩?/div>
Conditions
V
DS
= 480V, V
GS
= 0
V
GS
= 鹵30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 5A
V
DS
= 25V, I
D
= 5A
I
DR
= 10A, V
GS
= 0
2000
V
DS
= 20V, V
GS
= 0, f = 1MHz
210
70
30
40
60
195
1.25
41.67
3.6
600
2
0.6
6
鈭?.7
5
0.75
min
typ
max
100
鹵1
Unit
碌A
碌A
V
V
鈩?/div>
S
V
pF
pF
pF
ns
ns
ns
ns
擄C/W
擄C/W
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
2.0
1
1
2
