Ordering number : EN5300A
N-Channel Silicon MOSFET
2SK2316
Ultrahigh-Speed Switching Applications
Features
鈥?Low ON resistance.
鈥?Ultrahigh-speed switching.
鈥?Low-voltage drive (2.5V drive).
Package Dimensions
unit: mm
2062A-PCP
[2SK2316]
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Symbol
VDSS
VGSS
ID
IDP
PD
Conditions
Ratings
20
鹵10
2
8
1.5
3.5
150
鈥?5 to +150
1 : Gate
2 : Drain
3 : Source
SANYO: PCP
(Bottom View)
PW鈮?0碌d, duty cycle鈮?%
Mounted on ceramic board
(250mm
2
脳0.8mm)
Tc=25擄C
Unit
V
V
A
A
W
W
擄C
擄C
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics
at Ta=25擄C
Parameter
D-S Breakdown Voltage
G-S Breakdown Voltage
Zero-Gate Voltage
Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source
ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
錚磞
fs
錚?/div>
RDS(on)
RDS(on)
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0
IG=鹵100碌A(chǔ), VDS=0
VDS=16V, VGS=0
VGS=鹵8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4V
ID=1A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Ratings
min
20
鹵10
typ
max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
V
S
m鈩?/div>
m鈩?/div>
pF
pF
pF
100
鹵10
1.5
2.8
140
200
170
145
50
200
320
0.5
1.8
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) TA-0121 No.5300-1/4
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