Power F-MOS FETs
2SK2123
Silicon N-Channel Power F-MOS FET
s
Features
q
Avalanche energy capacity guaranteed: EAS > 100mJ
q
V
GSS
= 鹵30V guaranteed
q
High-speed switching: t
f
= 35ns
q
No secondary breakdown
unit: mm
4.6鹵0.2
蠁3.2鹵0.1
9.9鹵0.3
2.9鹵0.2
s
Applications
4.1鹵0.2 8.0鹵0.2
Solder Dip
13.7
鈥?.2
q
Contactless relay
q
Diving circuit for a solenoid
q
Driving circuit for a motor
q
Control equipment
q
Switching power supply
15.0鹵0.3
3.0鹵0.2
+0.5
1.2鹵0.15
1.45鹵0.15
0.75鹵0.1
2.54鹵0.2
5.08鹵0.4
1 2 3
2.6鹵0.1
0.7鹵0.1
s
Absolute Maximum Ratings
(T
C
= 25擄C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
450
鹵30
鹵5
鹵15
100
50
2
150
鈭?5
to +150
Unit
V
V
A
A
mJ
W
擄C
擄C
7
1: Gate
2: Drain
3: Source
TO-220E Package
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
T
C
= 25擄C
Ta = 25擄C
L = 8mH, I
L
= 5A, V
DD
= 50V, 1 pulse
s
Electrical Characteristics
(T
C
= 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
oss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
V
GS
= 10V, I
D
= 3A
V
DD
= 150V, R
L
= 50鈩?/div>
Conditions
V
DS
= 360V, V
GS
= 0
V
GS
= 鹵30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
V
DS
= 25V, I
D
= 3A
I
DR
= 5A, V
GS
= 0
700
V
DS
= 20V, V
GS
= 0, f = 1MHz
100
40
25
45
35
80
2.5
2
450
2
1
2.5
鈭?.2
5
1.3
min
typ
max
0.1
鹵1
Unit
mA
碌A(chǔ)
V
V
鈩?/div>
S
V
pF
pF
pF
ns
ns
ns
ns
擄C/W
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
1
1
2
3
