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2SK2053 Datasheet

  • 2SK2053

  • MOS Field Effect Transistor

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2053
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2053 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
PACKAGE DIMENSIONS (in mm)
5.7 鹵0.1
2.0 鹵0.2
1.5 鹵0.1
3.65 鹵0.1
FEATURES
鈥?New package intermediate between small signal and
power types
鈥?Gate can be driven by 1.5 V
鈥?Low ON resistance
R
DS(on)
= 0.40
鈩?/div>
MAX. @ V
GS
= 1.5 V, I
D
= 1.0 A
R
DS(on)
= 0.12
鈩?/div>
MAX. @ V
GS
= 4.0 V, I
D
= 2.5 A
EQUIVALENT CURCUIT
Drain (D)
1.0
S
0.5 鹵0.1
D
0.85
鹵0.1
G
0.5 鹵0.1
5.4 鹵0.25
0.55
0.4 鹵0.05
Marking: NA1
2.1
4.2
PIN
CONNECTIONS
Gate (G)
Gate
protection
diode
Source (S)
Internal S: Source
D: Drain
diode
G: Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
opt
T
stg
PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50 %
7.5 cm
2
脳
0.7 mm ceramic substrate used
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
16
鹵7.0
鹵5.0
鹵10.0
2.0
150
鈥?0 to +60
鈥?5 to +150
UNIT
V
V
A
A
W
藲C
藲C
藲C
Document No. D11224EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
漏
1996

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