2SK2013
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2013
Audio Frequency Power Amplifier Application
Unit: mm
High breakdown voltage
High forward transfer admittance
Complementary to 2SJ313
: V
DSS
= 180V
: |Y
fs
| = 0.7 S (typ.)
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain鈭抯ource voltage
Gate鈭抯ource voltage
Drain current
(Note 1)
Symbol
V
DSS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
180
鹵20
1
25
150
鈭?5~150
Unit
V
V
A
W
擄C
擄C
Drain power dissipation (Tc = 25擄C)
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC鈭?7
2-10R1B
Marking
Weight: 1.9 g (typ.)
K2013
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Electrical Characteristics
(Ta = 25擄C)
Characteristics
Gate leakage current
Drain鈭抯ource breakdown voltage
Gate鈭抯ource cut鈭抩ff voltage (Note 2)
Drain鈭抯ource saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Symbol
I
GSS
V
(BR) DSS
V
GS (OFF)
V
DS (ON)
|Y
fs
|
C
iss
C
oss
C
rss
Test Condition
V
DS
= 0, V
GS
= 鹵20 V
I
D
= 10 mA, V
GS
= 0
V
DS
= 10 V, I
D
= 10 mA
I
D
= 0.6 A, V
GS
= 10 V
V
DS
= 10 V, I
D
= 0.3 A
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
V
DD
鈮?/div>
10 V, V
GS
= 0, f = 1 MHz
Min
鈥?/div>
180
1.8
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
1.7
0.7
170
45
17
Max
鹵100
鈥?/div>
2.8
3.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
pF
Unit
nA
V
V
V
S
Note 1: Ensure that the channel temperature does not exceed 150擄C.
Note 2: V
GS (OFF)
Classification
O: 0.8~1.6,
Y: 1.4~2.8
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2006-11-21
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