Silicon Junction FETs (Small Signal)
2SK198
Silicon N-Channel Junction FET
For low-frequency amplification
2.8
鈥?.3
+0.2
unit: mm
0.65鹵0.15
s
Features
q
High mutual conductance g
m
q
Low noise type
q
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
0.65鹵0.15
1.5
鈥?.05
+0.25
0.95
2.9
鈥?.05
1
1.9鹵0.2
+0.2
0.95
3
0.4
鈥?.05
+0.1
s
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSX
V
GDO
I
D
I
G
P
D
T
ch
T
stg
Ratings
30
鈭?0
20
10
150
150
鈭?5
to +150
Unit
0.8
2
1.45
V
V
mA
mA
mW
擄C
擄C
1.1
鈥?.1
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol (Example): 1O
s
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
Mutual conductance
Symbol
I
DSS*
I
GSS
V
GSC
g
m
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
鈭?0V,
V
DS
= 0
V
DS
= 10V, I
D
= 10碌A(chǔ)
V
DS
= 10V, I
D
= 0.5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 30V, I
D
= 1mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
鈭?/div>
0.1
4
min
0.5
typ
max
12
鈭?00
鈭?.5
Unit
mA
nA
V
mS
pF
pF
mV
13
14
3.5
60
Input capacitance (Common Source) C
iss
Reverse transfer capacitance (Common Source) C
rss
Noise figure
NV
*
I
DSS
rank classification
Runk
I
DSS
(mA)
P
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
Marking Symbol
0 to 0.1
0.1 to 0.3
0.4鹵0.2
0.16
鈥?.06
+0.2
+0.1
1
1
2
