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2SK1960 Datasheet

  • 2SK1960

  • N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

  • 62.31KB

  • 6頁(yè)

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1960
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1960 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
PACKAGE DIMENSIONS (in mm)
4.5 鹵0.1
1.6 鹵0.2
1.5 鹵0.1
鈥?Gate can be driven by 1.5 V
鈥?Low ON resistance
R
DS(on)
= 0.8
鈩?/div>
MAX.
R
DS(on)
= 0.2
鈩?/div>
MAX.
@ V
GS
= 1.5 V, I
D
= 0.1 A
@ V
GS
= 4.0 V, I
D
= 1.5 A
0.8 MIN.
FEATURES
S
0.42 鹵0.06
D
G
0.42 鹵0.06
1.5 0.47
鹵0.06
3.0
0.41
+0.03
鈥?.05
Marking: NR
EQUIVALENT CURCUIT
Drain (D)
Gate (G)
Gate
protection
diode
Source (S)
Internal
diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50 %
16 cm
2
脳
0.7 mm ceramic substrate used
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
16
鹵7.0
鹵3.0
鹵6.0
2.0
150
鈥?5 to +150
UNIT
V
V
A
A
W
藲C
藲C
Document No. D11223EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
4.0 鹵0.25
2.5 鹵0.1
漏
1996

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