Power F-MOS FETs
2SK1867
Silicon N-Channel Power F-MOS FET
s
Features
q
Avalanche energy capacity guaranteed: EAS > 15mJ
q
V
GSS
= 鹵30V guaranteed
q
High-speed switching: t
f
= 26ns
q
No secondary breakdown
q
Allowing to supply by the radial taping
unit: mm
5.0鹵0.1
10.0鹵0.2
1.0
13.0鹵0.2
4.2鹵0.2
90藲
s
Applications
q
Contactless relay
q
Diving circuit for a solenoid
q
Driving circuit for a motor
q
Control equipment
q
Switching power supply
2.5鹵0.2
1.2鹵0.1
C1.0
2.25鹵0.2
18.0鹵0.5
Solder Dip
0.35鹵0.1
0.65鹵0.1
1.05鹵0.1
0.55鹵0.1
0.55鹵0.1
s
Absolute Maximum Ratings
(T
C
= 25擄C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
900
鹵30
鹵2
鹵6
15
15
2
150
鈭?5
to +150
Unit
V
V
A
A
mJ
W
擄C
擄C
C1.0
1 2 3
2.5鹵0.2
2.5鹵0.2
1: Gate
2: Drain
3: Source
MT4 Type Package
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
T
C
= 25擄C
Ta = 25擄C
L = 7.5mH, I
L
= 2A, V
DD
= 50V, 1 pulse
s
Electrical Characteristics
(T
C
= 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
oss
t
on
t
f
t
d(off)
R
th(ch-c)
Conditions
V
DS
= 900V, V
GS
= 0
V
GS
= 鹵30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 2A
V
DS
= 25V, I
D
= 2A
I
DR
= 2A, V
GS
= 0
730
V
DS
= 20V, V
GS
= 0, f = 1MHz
90
40
V
GS
= 10V, I
D
= 2A
V
DD
= 200V, R
L
= 100鈩?/div>
40
35
105
8.33
1.5
900
1
3.8
2
鈭?.6
5
4.85
min
typ
max
0.1
鹵1
Unit
mA
碌A(chǔ)
V
V
鈩?/div>
S
V
pF
pF
pF
ns
ns
ns
擄C/W
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
1
1
2
3
