鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Drain-source voltage (Gate open)
Drain-gate voltage (Souse open)
Drain-source current (Gate open)
Drain-gate current (Souse open)
Gate-source cutoff current (Drain open)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
DSO
V
DGO
I
DSO
I
DGO
I
GSO
P
D
T
opr
T
stg
Rating
20
20
2
2
2
200
鈭?0
to
+80
鈭?5
to
+150
Unit
10藲
(0.95)
(0.95)
2.20
鹵0.15
5藲
(0.5)
1.9
鹵0.1
2.9
鹵0.2
V
V
mA
mA
mA
mW
擄C
擄C
0.7
鹵0.1
1: Drain
2: Source
3: Gate
Minit3-F1 Package
Marking Symbol: 1H
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Drain current
Drain-sourse cutoff current
(G-S short)
Mutual conductance
Noise voltage
Voltage gain
Symbol
I
D
I
DSS
g
m
NV
G
v1
G
v2
G
v3
鈭嗭４G
v 路
f錚?/div>
*
Voltage gain difference
鈭嗭４G
v2
鈭?/div>
G
v1
錚?/div>
鈭嗭４G
v1
鈭?/div>
G
v3
錚?/div>
Conditions
V
DS
= 4.5
V, C
O
=
10 pF錛?/div>
D
=
2.2 k鈩?/div>
鹵
1%
R
V
DS
=
4.5 V, V
GS
=
0
V
D
= 4.5 V, V
GS
= 0錛?= 1 kHz
f
V
D
=
4.5 V, R
D
=
2.2 k鈩?/div>
鹵
1%
C
O
=
10 pF, A-curve
V
D
=
4.5 V, R
D
=
2.2 k鈩?/div>
鹵
1%
C
O
=
10 pF, e
G
=
10 mV錛?/div>
=
1 kHz
f
V
D
=
12 V, R
D
=
2.2 k鈩?/div>
鹵
1%
C
O
=
10 pF, e
G
=
10 mV錛?/div>
=
1 kHz
f
V
D
=
1.5 V, R
D
=
2.2 k鈩?/div>
鹵
1%
C
O
=
10 pF, e
G
=
10 mV錛?/div>
=
1 kHz
f
V
D
=
4.5 V, R
D
=
2.2 k鈩?/div>
鹵
1%
C
O
=
10 pF, e
G
=
10 mV錛?/div>
=
1 kHz to 70 Hz
f
0
0
3.5
3.5
dB
dB
鈭?
0
鈭?.5
2
3.3
鈭?/div>
0.3
0
1.5
Min
100
95
700
1 600
4
Typ
Max
600
480
Unit
碌A(chǔ)
碌A(chǔ)
碌S
碌V
dB
dB
dB
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * :
鈭嗭４G
v 路
f錚?is assured for AQL0.065%. (the measurment method is used by source-grounded circuit.)
Publication date: August 2003
SJF00039AED
1
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