Power F-MOS FETs
2SK1613
Silicon N-Channel Power F-MOS FET
s
Features
q
High avalanche energy capacity
q
V
GSS
: 30V guaranteed
q
Low R
DS(on)
, high-speed switching characteristic
4.0鹵0.1
unit: mm
15.0鹵0.5
4.0鹵0.1
13.0鹵0.5
10.5鹵0.5
4.5鹵0.2
s
Applications
q
High-speed switching (switching power supply)
q
For high-frequency power amplification
s
Absolute Maximum Ratings
(T
C
= 25擄C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
900
鹵30
鹵5
鹵10
45
100
2.5
150
鈭?5
to +150
Unit
V
16.2鹵0.5
2.0鹵0.1
20.0鹵0.3
19.0鹵0.3
15.0鹵0.2
蠁3.2鹵0.1
3.5
Solder Dip
V
A
A
mJ
W
擄C
擄C
2.0鹵0.2
1.1鹵0.1
1.4鹵0.3
12.5
5.45鹵0.3
10.9鹵0.5
1
2
3
0.6鹵0.2
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
T
C
= 25擄C
Ta = 25擄C
1: Gate
2: Drain
3: Source
EIAJ: SC-65(a)
TOP-3 Package (a)
Single pulse
s
Electrical Characteristics
(T
C
= 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Avalanche energy capacity
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Symbol
I
DSS
I
GSS
V
DSS
EAS
*
V
th
R
DS(on)
| Y
fs
|
C
oss
t
on
t
f
t
d(off)
Conditions
V
DS
= 720V, V
GS
= 0
V
GS
= 鹵30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
L = 3.6mH, I
D
= 5A, V
DD
= 50V
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
V
DS
= 25V, I
D
= 3A
V
DS
= 20V, V
GS
= 0, f = 1MHz
1.5
900
45
2
2
3.5
1400
140
60
V
GS
= 10V, I
D
= 3A
V
DD
= 200V, R
L
= 66鈩?/div>
90
60
170
5
2.8
min
typ
max
0.1
鹵1
Unit
mA
碌A(chǔ)
V
mJ
V
鈩?/div>
S
pF
pF
pF
ns
ns
ns
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Fall time
Turn-off time (delay time)
*
Avalanche energy capacity test circuit
L
I
D
Gate
V
DS
D
rain
S
ource
C
V
DD
PVS
R
GS
1
1
2
