Power F-MOS FETs
2SK1611
Silicon N-Channel Power F-MOS FET
s
Features
q
High avalanche energy capacity
q
V
GSS
: 30V guaranteed
q
Low R
DS(on)
, high-speed switching characteristic
unit: mm
0.7鹵0.1
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
4.2鹵0.2
s
Applications
16.7鹵0.3
7.5鹵0.2
q
High-speed switching (switching power supply, AC adaptor)
q
For high-frequency power amplification
蠁3.1鹵0.1
s
Absolute Maximum Ratings
(T
C
= 25擄C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
800
鹵30
鹵3
鹵6
20
50
2
150
鈭?5
to +150
Unit
V
V
A
A
mJ
4.0
1.4鹵0.1
1.3鹵0.2
14.0鹵0.5
Solder Dip
0.5
+0.2
鈥?.1
0.8鹵0.1
2.54鹵0.25
5.08鹵0.5
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
T
C
= 25擄C
Ta = 25擄C
1
2
W
擄C
擄C
1: Gate
2: Drain
3: Source
EIAJ: SC-67
TO-220 Full Pack Package (a)
3
Single pulse
s
Electrical Characteristics
(T
C
= 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Avalanche energy capacity
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Symbol
I
DSS
I
GSS
V
DSS
EAS
*
V
th
R
DS(on)
| Y
fs
|
C
oss
t
on
t
f
t
d(off)
Conditions
V
DS
= 640V, V
GS
= 0
V
GS
= 鹵30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
L = 4.5mH, I
D
= 3A, V
DD
= 50V
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 2A
V
DS
= 25V, I
D
= 2A
V
DS
= 20V, V
GS
= 0, f = 1MHz
1.5
800
20
1
3.2
2.4
730
90
40
V
GS
= 10V, I
D
= 2A
V
DD
= 200V, R
L
= 100鈩?/div>
40
35
105
5
4
min
typ
max
0.1
鹵1
Unit
mA
碌A(chǔ)
V
mJ
V
鈩?/div>
S
pF
pF
pF
ns
ns
ns
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Fall time
Turn-off time (delay time)
*
Avalanche energy capacity test circuit
L
I
D
Gate
V
DS
D
rain
S
ource
C
V
DD
PVS
R
GS
1
1
2
