鈮?/div>
50 %
Remark
Source
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14770EJ2V0DS00 (2nd edition)
(Previous No.TC-2343)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
漏
0 to 0.1
ORDERING INFORMATION
1.1 to 1.4
1991, 2000