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2SK1398 Datasheet

  • 2SK1398

  • N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

  • 54.30KB

  • 8頁(yè)

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1398
N-CHANNEL MOS FET
FOR HIGH SPEED SWITCHING
5
DESCRIPTION
The 2SK1398 is N-channel MOS Field Effect Transistor
designed for a high-speed switching device in digital circuits.
The 2SK1398 is driven by a 2.5-V power source, it is
suitable for applications including headphone stereos
which need power saving.
ORDERING INFORMATION
PART NUMBER
2SK1398
PACKAGE
SST
FEATURES
鈥?/div>
Directly driven by ICs having a 3-V power supply.
鈥?/div>
Not necessary to consider driving current because of its high input impedance.
鈥?/div>
Possible to reduce the number of parts by omitting the bias resistor.
鈥?/div>
Can be used complementary with the 2SJ184.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
50
鹵7.0
鹵100
鹵200
250
150
鈥?5 to +150
V
V
mA
mA
mW
擄C
擄C
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
鈮?/div>
10 ms, Duty cycle
鈮?/div>
50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14772EJ2V0DS00 (2nd edition)
(Previous No. TC-2342)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
漏
1991, 2000

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