TOSHIBA
Discrete Semiconductors
2SK1358
Field Effect Transistor
Silicon N Channel MOS Type (
蟺
-MOS II.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications
Features
鈥?Low Drain-Source ON Resistance
- R
DS(ON)
= 1.1
鈩?/div>
(Typ.)
鈥?High Forward Transfer Admittance
-
錚?/div>
Y
fs
錚?/div>
= 4.0S (Typ.)
鈥?Low Leakage Current
- I
DSS
= 300
碌
A (Max.) @ V
DS
= 720V
鈥?Enhancement-Mode
- V
th
= 1.5 ~ 3.5V @ V
DS
= 10V, I
D
= 1mA
Absolute Maximum Ratings (Ta = 25
擄
C)
CHARACTERISTIC
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 20k
鈩?/div>
)
Gate-Source Voltage
Drain Current
DC
Pulse
Drain Power Dissipation
(Tc = 25
擄
C)
Channel Temperature
Storage Temperature Range
Industrial Applications
Unit in mm
SYMBOL
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
RATING
900
900
鹵
30
9
27
150
150
-55 ~ 150
UNIT
V
V
V
A
W
擄
C
擄
C
Thermal Characteristics
CHARACTERISTIC
Thermal Resistance, Channel to Case
Thermal Resistance, Channel to Ambient
SYMBOL
R
th(ch-c)
R
th(ch-a)
MAX.
0.833
50
UNIT
擄
C/W
擄
C/W
This transistor is an electrostatic sensitive device. Please handle with care.
TOSHIBA CORPORATION
1/6
next