Silicon Junction FETs (Small Signal)
2SK123
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
5.8
鈭?.3
+0.2
+0.25
unit: mm
s
Features
q
High mutual conductance g
m
q
Low noise voltage of NV
0.4
鈭?.05
2.4鹵0.1
1
0.95 0.95
1.9鹵0.2
1.5
鈭?.05
1.9鹵0.1
+0.1
1.45
2
0.16
鈭?.06
+0.1
+0.1
3
s
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Drain to Source voltage
Drain to Gate voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
DSO
V
DGO
I
DSO
I
DGO
I
GSO
P
D
T
opr
T
stg
Ratings
20
20
2
2
2
200
鈭?0
to +80
鈭?5
to +150
Unit
V
V
mA
mA
mA
mW
擄C
擄C
0.4
鈭?.05
+0.1
0.4
鈭?.05
1: Drain
2: Source
3: Gate
Mini Flat Package (3-pin)
Marking Symbol: 1H
Note: For the forming type, (Y) is indicated after the part No.
s
Electrical Characteristics
(Ta = 25擄C)
Parameter
Current consumption
Drain to Source cut-off current
Mutual conductance
Noise figure
Symbol
I
D
I
DSS
g
m
NV
Conditions
V
D
= 4.5V, C
O
= 10pF, R
D
= 2.2k鈩?鹵 1%
V
DS
= 4.5V, V
GS
= 0
V
D
= 4.5V, V
GS
= 0, f = 1kHz
V
D
= 4.5V, R
D
= 2.2k鈩?鹵 1%
C
O
= 10pF, A-curve
V
D
= 4.5V, R
D
= 2.2k鈩?鹵 1%
C
O
= 10pF, e
G
= 10mV, f = 1kHz
V
D
= 12V, R
D
= 2.2k鈩?鹵 1%
C
O
= 10pF, e
G
= 10mV, f = 1kHz
V
D
= 1.5V, R
D
= 2.2k鈩?鹵 1%
C
O
= 10pF, e
G
= 10mV, f = 1kHz
鈭?
2
min
100
95
0.7
1.6
4
typ
max
600
480
Unit
碌A(chǔ)
碌A(chǔ)
mS
碌V
G
V1
Voltage gain
G
V2
G
V3
Voltage gain difference
鈭唡G
V2
鈭?/div>
G
V1
|
鈭唡G
V1
鈭?/div>
G
V3
|
dB
0
鈭?.5
0
0
3.3
鈭?/div>
0.3
+3.5
+3.5
dB
dB
dB
dB
1.1
鈭?.1
0.8
+0.2
+0.2
2.9
鈭?.05
1
1
2
