Silicon MOS FETs (Small Signal)
2SK1228
Silicon N-Channel MOS FET
For switching
2.8
鈥?.3
+0.2
unit: mm
0.65鹵0.15
s
Features
q
High-speed switching
q
Wide frequency band
q
Incorporating a built-in gate protection-diode
q
Allowing 2.5V drive
0.65鹵0.15
1.5
鈥?.05
+0.25
0.95
2.9
鈥?.05
1
1.9鹵0.2
+0.2
0.95
3
0.4
鈥?.05
+0.1
2
s
Absolute Maximum Ratings
(Ta = 25擄C)
1.1
鈥?.1
+0.2
1.45
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
10
50
100
150
150
鈭?5
to +150
Unit
V
V
mA
mA
mW
擄C
擄C
1: Gate
2: Source
3: Drain
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol: 4V
s
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
C
oss
t
on
*2
*2
*1
Conditions
V
DS
= 20V, V
GS
= 0
V
GS
= 10V, V
DS
= 0
I
D
= 10碌A(chǔ), V
GS
= 0
I
D
= 100碌A(chǔ), V
DS
= 5V
I
D
= 10mA, V
GS
= 2.5V
I
D
= 10mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
DD
= 5V, V
GS
= 0 to 2.5V, R
L
= 470鈩?/div>
V
DD
= 5V, V
GS
= 2.5 to 0V, R
L
= 470鈩?/div>
min
typ
0 to 0.1
0.1 to 0.3
0.4鹵0.2
0.8
max
1
1
50
0.5
100
0.8
27
1.1
50
0.16
鈥?.06
+0.1
Unit
碌A(chǔ)
碌A(chǔ)
V
V
鈩?/div>
mS
pF
pF
pF
碌s
碌s
20
39
4.5
4.1
1.2
0.2
0.2
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Turn-off time
*1
*2
t
off
Pulse measurement
t
on
, t
off
measurement circuit
V
out
470鈩?/div>
V
in
V
DD
= 5V
V
out
10%
10%
90%
t
on
t
off
90%
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