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2SK1109 Datasheet

  • 2SK1109

  • N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPED...

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  • NEC   NEC

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DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK1109
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK1109 is suitable for converter of ECM.
PACKAGE DRAWING (Unit: mm)
FEATURES
鈥?/div>
Compact package
鈥?/div>
High forward transfer admittance
1000
碌
S TYP. (I
DSS
= 100
碌
A)
1600
碌
S TYP. (I
DSS
= 200
碌
A)
鈥?/div>
Includes diode and high resistance at G - S
0.8
1.8 MIN.
1. Source
2. Drain
3. Gate
1
2
PART NUMBER
2SK1109
PACKAGE
SC-59 (MM)
1.1
1.8 MIN.
ORDERING INFORMATION
3
2.9 鹵 0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note
V
GS
= 鈥?.0 V
Remark
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
Note
V
DSX
V
GDO
I
D
I
G
P
T
T
j
T
stg
20
鈥?0
10
10
80
125
鈥?5 to +125
V
V
mA
mA
mW
擄C
擄C
EQUIVALENT CIRCUIT
Drain
Gate
Source
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15940EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
5.5 鹵 0.4
1.5
漏
2002

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