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2SK1061_07 Datasheet

  • 2SK1061_07

  • Silicon N Channel MOS Type High Speed Switching Applications

  • 5頁

  • TOSHIBA

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2SK1061
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1061
High Speed Switching Applications
Analog Switch Applications
Interface Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Excellent switching times: t
on
= 14 ns (typ.)
High forward transfer admittance: |Y
fs
| = 100 mS (min)
Low on resistance: R
DS (ON)
= 0.6
鈩?/div>
(typ.)
Enhancement-mode
Complementary to 2SJ167
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
60
鹵20
200
800
300
150
鈭?5~150
Unit
V
V
mA
mW
擄C
擄C
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-4E1E
Weight: 0.13 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01

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