Silicon Junction FETs (Small Signal)
2SK0123
(2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
s
Features
q
High mutual conductance g
m
q
Low noise voltage of NV
1
2
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
鈥?.05
10藲
Unit: mm
0.40
+0.10
鈥?.05
3
0.16
+0.10
鈥?.06
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
s
Absolute Maximum Ratings
(T
a
=
25擄C)
Parameter
Drain to Source voltage
Drain to Gate voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
DSO
V
DGO
I
DSO
I
DGO
I
GSO
P
D
T
opr
T
stg
Ratings
20
20
2
2
2
200
鈭?0
to
+80
鈭?5
to
+150
Unit
V
V
mA
mA
mA
mW
擄C
擄C
1.1
+0.2
鈥?.1
(0.65)
0 to 0.1
1.1
+0.3
鈥?.1
1: Drain
2: Source
3: Gate
Mini3-G1 Package
Marking Symbol: 1H
Note: For the forming type, (Y) is indicated after the part No.
s
Electrical Characteristics
(T
a
=
25擄C)
Parameter
Current consumption
Drain to Source cut-off current
Mutual conductance
Noise figure
Symbol
I
D
I
DSS
g
m
NV
Conditions
V
D
=
4.5 V, C
O
=
10 pF, R
D
=
2.2 k鈩?/div>
鹵
1%
V
DS
=
4.5 V, V
GS
=
0
V
D
=
4.5 V, V
GS
=
0, f
=
1 kHz
V
D
=
4.5V, R
D
=
2.2 k鈩?/div>
鹵
1%
C
O
=
10 pF, A-curve
鈭?
V
D
=
4.5 V, R
D
=
2.2 k鈩?/div>
鹵
1%
C
O
=
10 pF, e
G
=
10 mV, f
=
1 kHz
V
D
=
12 V, R
D
=
2.2 k鈩?/div>
鹵
1%
C
O
=
10 pF, e
G
=
10 mV, f
=
1 kHz
V
D
=
1.5 V, R
D
=
2.2 k鈩?/div>
鹵
1%
C
O
=
10 pF, e
G
=
10 mV, f
=
1 kHz
2
min
100
95
0.7
1.6
4
typ
max
600
480
Unit
碌A(chǔ)
碌A(chǔ)
mS
碌V
G
V1
Voltage gain
G
V2
G
V3
Voltage gain difference
鈭唡G
V2
鈭?/div>
G
V1
|
鈭唡G
V1
鈭?/div>
G
V3
|
dB
0
鈭?.5
0
0
3.3
鈭?/div>
0.3
+3.5
+3.5
dB
dB
dB
dB
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2002
SJF00005BED
0.4
鹵0.2
5藲
1
2SK0123相關(guān)型號(hào)PDF文件下載
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型號(hào)
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描述
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英文版
ETC
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英文版
For Impedance Conversion In Low Frequency
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1
2
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