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2SJ680 Datasheet

  • 2SJ680

  • Silicon P-Channel MOS Type Chopper Regulator, DC/DC Converte...

  • 189.55KB

  • 6頁

  • TOSHIBA

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2SJ680
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (蟺-MOS V)
2SJ680
錛栵紟錛暵憋紣錛庯紥
錛曪紟錛捖憋紣錛庯紥
錛戯紟錛暵憋紣錛庯紥
Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low drain-source ON-resistance: R
DS (ON)
= 1.6
鈩?/div>
(typ.)
High forward transfer admittance: |Y
fs
| = 2.0 S (typ.)
Low leakage current: I
DSS
=
鈭?00
渭A
(max) (V
DS
=
鈭?00
V)
Enhancement model: V
th
=
鈭?.5
~
鈭?.5
V (V
DS
=
鈭?0
V, I
D
=
鈭?
mA)
錛愶紟錛?/div>
Unit: mm
錛愶紟錛?MAX錛?/div>
錛戯紟錛?/div>
錛曪紟錛暵憋紣錛庯紥
錛戯紟錛懧憋紣錛庯紥
錛旓紟錛懧憋紣錛庯紥
錛曪紟錛?/div>
錛愶紟錛?MAX
錛掞紟錛?/div>
錛掞紟錛?/div>
錛掞紟錛撀憋紣錛庯紥
錛愶紟錛柭憋紣錛庯紤錛?/div>
錛愶紟錛柭憋紣錛庯紤錛?/div>
錛?/div>
錛?/div>
錛?/div>
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristic
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k惟)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
鈭?00
鈭?00
鹵20
鈭?.5
鈭?0
20
97.5
鈭?.5
2.0
150
鈭?5~150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
錛愶紟錛?MAX錛?/div>
錛戯紟1 MAX錛?/div>
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-7J2B
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Weight: 0.36 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
6.25
125
Unit
擄C/W
擄C/W
Note 1: Ensure that the channel temperature does not exceed 150擄C.
Note 2: V
DD
= 鈭?0
V, Tch
=
25擄C (initial), L
= 鈭?5.2
mH, I
AR
= 鈭?.5
A, R
G
=
25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-17

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