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2SJ670 Datasheet

  • 2SJ670

  • P-Channel Silicon MOSFET General-Purpose Switching Device

  • 38.56KB

  • 4頁

  • SANYO

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Ordering number : EN8354A
2SJ670
SANYO Semiconductors
DATA SHEET
2SJ670
Features
鈥?/div>
鈥?/div>
鈥?/div>
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW鈮?0碌s, duty cycle鈮?%
Mounted on a ceramic board (600mm
!0.8mm)
2
Conditions
Ratings
--100
鹵20
--1.5
--6
1.5
3.5
150
--55 to +150
Unit
V
V
A
A
W
W
擄C
擄C
Tc=25擄C
Electrical Characteristics
at Ta=25擄C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
錚?/div>
yfs
錚?/div>
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
ID=--1mA, VGS=0V
VDS=-
-100V, VGS=0V
VGS=鹵16V, VDS=0V
VDS=-
-10V, ID=--1mA
VDS=-
-10V, ID=-
-0.8A
ID=--0.8A, VGS=-
-10V
ID=--0.8A, VGS=-
-4V
VDS=-
-20V, f=1MHz
VDS=-
-20V, f=1MHz
VDS=-
-20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min
--100
--1
鹵10
--1.2
1.3
2.3
410
530
535
43
31
9
4.5
62
34
535
745
--2.6
typ
max
Unit
V
碌A(chǔ)
碌A(chǔ)
V
S
m鈩?/div>
m鈩?/div>
pF
pF
pF
ns
ns
ns
ns
Marking : NA
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82506 MS IM TC-00000122 / 62005PA MS IM TB-00001479 No.8354-1/4

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