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2SJ669 Datasheet

  • 2SJ669

  • Silicon P-Channel MOS Type Relay Drive, DC/DC Converter and ...

  • 6頁(yè)

  • TOSHIBA

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2SJ669
TOSHIBA Field Effect Transistor
Silicon P-Channel MOS Type (U鈭扢OS III)
2SJ669
Relay Drive, DC/DC Converter and Motor Drive
Applications
4-V gate drive
Low drain-source ON-resistance: R
DS (ON)
= 0.12
鈩?/div>
(typ.)
High forward transfer admittance: |Y
fs
| = 5.0 S (typ.)
Low leakage current: I
DSS
=
鈭?00 渭A
(max) (V
DS
=
鈭?0
V)
Enhancement mode: V
th
=
鈭?.8
to
鈭?.0
V
(V
DS
=
鈭?0
V, I
D
=
鈭?
mA)
Unit: mm
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristic
Drain鈭抯ource voltage
Drain鈭抔ate voltage (R
GS
= 20 k鈩?
Gate鈭抯ource voltage
Drain current
Drain power dissipation
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
鈭?0
鈭?0
鹵20
鈭?
鈭?0
1.2
40.5
鈭?
0.12
150
鈭?5~150
Unit
V
V
V
A
A
W
mJ
A
mJ
擄C
擄C
Pulse (Note 1)
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-8M1B
Weight: 0.54 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to
ambient
Symbol
R
th (ch鈭抋)
Max
104
Unit
擄C / W
Note 1: The channel temperature should not exceed 150鈩?during use.
Note 2: V
DD
=
鈭?5
V, T
ch
= 25擄C (initial), L = 2.2 mH, R
G
= 25
鈩?
I
AR
=
鈭?
A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-17

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