鈮?/div>
1%
2
2.
Mounted on ceramic substrate of 300 mm x 0.64 mm.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
V
ESD
= 鹵100 V TYP. (C = 200 pF, R = 0
鈩?
Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Caution
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16597EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2003