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2SJ600 Datasheet

  • 2SJ600

  • SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

  • 43.67KB

  • 4頁

  • NEC   NEC

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PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ600
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ600 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER
2SJ600
PACKAGE
TO-251
TO-252
FEATURES
鈥?/div>
Low on-state resistance:
R
DS(on)1
= 50 m鈩?MAX. (V
GS
= 鈥?0 V, I
D
= 鈥?3 A)
R
DS(on)2
= 79 m鈩?MAX. (V
GS
= 鈥?.0 V, I
D
= 鈥?3 A)
鈥?/div>
Low C
iss
: C
iss
= 1900 pF TYP.
鈥?/div>
Built-in gate protection diode
鈥?/div>
TO-251/TO-252 package
2SJ600-Z
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25擄C)
Drain Current (pulse)
Note1
(TO-251)
鈥?0
+
20
+
25
+
70
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
V
V
A
A
W
W
擄C
擄C
A
mJ
(TO-252)
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
45
1.0
150
鈥?5 to +150
鈥?5
62.5
I
AS
E
AS
Notes 1.
PW
鈮?/div>
10
碌
s, Duty cycle
鈮?/div>
1%
2.
Starting T
ch
= 25擄C, R
G
= 25
鈩?
V
GS
= 鈥?0 V
隆
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14645EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP(K)
Printed in Japan
漏
2000

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