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2SJ567 Datasheet

  • 2SJ567

  • TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...

  • 7頁(yè)

  • TOSHIBA

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2SJ567
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (蟺-MOSV)
2SJ567
Switching Applications
Chopper Regulator, DC-DC Converter and
Motor Drive Applications
路
路
路
路
Low drain-source ON resistance: R
DS (ON)
= 1.6
鈩?/div>
(typ.)
High forward transfer admittance: |Y
fs
| = 2.0 S (typ.)
Low leakage current: I
DSS
=
鈭?00
碌A(chǔ) (max) (V
DS
=
鈭?00
V)
Enhancement-model: V
th
=
鈭?.5
~
鈭?.5
V (V
DS
=
鈭?0
V, I
D
=
鈭?
mA)
Industrial Applications
Unit: mm
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
-200
-200
鹵20
-2.5
-10
20
97.5
-2.5
2.0
150
-55~150
Unit
V
V
V
A
JEDEC
W
mJ
A
mJ
擄C
擄C
鈥?/div>
SC-64
2-7B1B
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEITA
TOSHIBA
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
6.25
125
Unit
擄C/W
擄C/W
Note 1: Please use devices on condition that the channel temperature
is below 150擄C.
Note 2: V
DD
= -50
V, Tch
=
25擄C (initial), L
= -25.2
mH, I
AR
= -2.5
A
R
G
=
25
W,
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-64
2-7J1B
Weight: 0.36 g (typ.)
1
2002-08-12

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