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2SJ567_06 Datasheet

  • 2SJ567_06

  • Silicon P-Channel MOS Type Switching Applications

  • 6頁(yè)

  • TOSHIBA

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2SJ567
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (蟺-MOSV)
2SJ567
Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low drain-source ON-resistance: R
DS (ON)
= 1.6
鈩?/div>
(typ.)
High forward transfer admittance: |Y
fs
| = 2.0 S (typ.)
Low leakage current: I
DSS
=
鈭?00 渭A
(max) (V
DS
=
鈭?00
V)
Enhancement model: V
th
=
鈭?.5
~
鈭?.5
V (V
DS
=
鈭?0
V, I
D
=
鈭?
mA)
Unit: mm
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristic
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k惟)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
鈭?00
鈭?00
鹵20
鈭?.5
鈭?0
20
97.5
鈭?.5
2.0
150
鈭?5~150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
Drain power dissipation (Tc
=
25擄C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-64
2-7B1B
Weight: 0.36 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
6.25
125
Unit
擄C/W
擄C/W
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-64
2-7J1B
Note 1: Ensure that the channel temperature does not exceed 150擄C.
Note 2: V
DD
= 鈭?0
V, Tch
=
25擄C (initial), L
= 鈭?5.2
mH, I
AR
= 鈭?.5
A
R
G
=
25
惟
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Weight: 0.36 g (typ.)
1
2006-11-16

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