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2SJ538 Datasheet

  • 2SJ538

  • P-Channel Silicon MOSFET Load Switching Applications

  • 40.16KB

  • 4頁

  • SANYO

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上傳產(chǎn)品規(guī)格書

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Ordering number : ENA0519
2SJ538
SANYO Semiconductors
DATA SHEET
2SJ538
Features
鈥?/div>
鈥?/div>
P-Channel Silicon MOSFET
Load Switching Applications
Low ON-resistance.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW鈮?0碌s, duty cycle鈮?%
Tc=25擄C
Conditions
Ratings
--30
鹵20
--15
--45
1.0
30
150
--55 to +150
Unit
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
at Ta=25擄C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
錚?/div>
yfs
錚?/div>
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
Conditions
ID=--1mA, VGS=0V
VDS=-
-30V, VGS=0V
VGS=鹵16V, VDS=0V
VDS=-
-10V, ID=--1mA
VDS=-
-10V, ID=-
-8A
ID=--8A, VGS=-
-10V
ID=--4A, VGS=-
-4V
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
Ratings
min
--30
--100
鹵10
--1.0
10
15
24
40
2000
1000
470
30
52
--2.5
typ
max
Unit
V
碌A
碌A
V
S
m鈩?/div>
m鈩?/div>
pF
pF
pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0406PA MS IM TC-00000219 No. A0519-1/4

2SJ538 產(chǎn)品屬性

  • P通道

  • 15A

  • 30V

  • 24mohm

  • -10V

  • -2.5V

  • 30W

  • I-PAK

  • 30W

  • 30W

  • IPAK

  • I-PAK

  • -15A

  • -10V

  • -30V

  • -20V

  • 45A

  • 通孔安裝

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