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2SJ537_06 Datasheet

  • 2SJ537_06

  • Silicon P Channel MOS Type Chopper Regulator, DC−DC Co...

  • 6頁

  • TOSHIBA

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2SJ537
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (L
鈭捪€鈭扢OSVI)
2
2SJ537
Chopper Regulator, DC鈭扗C Converter and Motor Drive
Applications
Low drain鈭抯ource ON resistance
High forward transfer admittance
: R
DS (ON)
= 0.16
鈩?/div>
(typ.)
: |Y
fs
| = 3.5 S (typ.)
Unit: mm
Low leakage current : I
DSS
=
鈭?00 渭A
(V
DS
=
鈭?0
V)
Enhancement鈭抦ode : V
th
=
鈭?.8~鈭?.0
V (V
DS
=
鈭?0
V, I
D
=
鈭?
mA)
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain鈭抯ource voltage
Drain鈭抔ate voltage (R
GS
= 20 k鈩?
Gate鈭抯ource voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
鈭?0
鈭?0
鹵20
鈭?
鈭?5
0.9
150
鈭?5~150
Unit
V
V
V
A
A
W
擄C
擄C
JEDEC
JEITA
TOSHIBA
TO-92MOD
鈥?/div>
2-5J1C
Pulse (Note 1)
Weight: 0.36 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to
ambient
Symbol
R
th (ch鈭抋)
Max
138
Unit
擄C / W
Note 1: Please use devices on condition that the channel temperature is below 150擄C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2006-11-16

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