DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ494
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
PACKAGE DIMENSIONS
(in millimeter)
10.0鹵0.3
4.5鹵0.2
3.2鹵0.2
2.7鹵0.2
15.0鹵0.3
3鹵0.1
4鹵0.2
FEATURES
鈥?Super Low On-State Resistance
R
DS(on)1
= 50 m: Max. (V
GS
= 鈥?0 V, I
D
= 鈥?0 A)
R
DS(on)2
= 88 m: Max. (V
GS
= 鈥? V, I
D
= 鈥?0 A)
鈥?Low C
iss
C
iss
= 2360 pF Typ.
0.7鹵0.1
2.54
鈥?Built-in Gate Protection Diode
13.5 MIN.
12.0鹵0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage
Gate to Source Voltage*
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)**
Total Power Dissipation (T
C
= 25 擄C)
Total Power Dissipation (T
A
= 25 擄C)
Channel Temperature
Storage Temperature
V
DSS
V
GSS (AC)
V
GSS (DC)
I
D (DC)
I
D (pulse)
P
T
P
T
T
ch
T
stg
鈥?0
鈥?/div>
+20
鈥?0, 0
鈥?/div>
+20
鈥?/div>
+80
35
2.0
150
鈥?5 to +150
V
V
V
A
A
W
W
擄C
擄C
1.3鹵0.2
1.5鹵0.2
2.54
2.5鹵0.1
0.65鹵0.1
1. Gate
2. Drain
3. Source
1 2 3
ISOLATED TO-220 (MP-45F)
Drain
* f = 20 kHz, Duty Cycle
d
10% (+Side)
** PW
d
10
P
s, Duty Cycle
d
1%
Gate
Body
Diode
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
R
th (ch-C)
R
th (ch-A)
3.57 擄C/W
62.5 擄C/W
Gate Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. D11266EJ2V0DS00 (2nd edition)
Date Published January 1998 N CP(K)
Printed in Japan
漏
1998
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