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2SJ493 Datasheet

  • 2SJ493

  • SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

  • 68.52KB

  • 8頁(yè)

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ493
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER
2SJ493
PACKAGE
Isolated TO-220
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
鈥?/div>
Super low on-state resistance
R
DS(on)1
= 100 m鈩?(MAX.) (V
GS
= 鈥?0 V, I
D
= 鈥? A)
R
DS(on)2
= 185 m鈩?(MAX.) (V
GS
= 鈥? V, I
D
= 鈥? A)
鈥?/div>
Low C
iss
: C
iss
= 1210 pF (TYP.)
鈥?/div>
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note2
Note1
V
DSS
V
GSS(AC)
V
GSS(DC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
鈥?0
#
20
V
V
V
A
A
W
W
擄C
擄C
A
mJ
鈥?0, 0
#
16
#
64
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
30
2.0
150
鈥?5 to +150
鈥?6
25.6
I
AS
E
AS
Notes 1.
f = 20 kHz, Duty Cycle
鈮?/div>
10% (+Side)
2.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
3.
Starting T
ch
= 25 擄C, R
A
= 25
鈩?
V
GS
= 鈥?0 V
隆
0
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
R
th(ch-C)
R
th(ch-A)
4.17
62.5
擄C/W
擄C/W
The information in this document is subject to change without notice.
Document No.
D11265EJ3V0DS00 (3rd edition)
Date Published January 1999 NS CP(K)
Printed in Japan
漏
1999

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