2SJ463A Datasheet

IC型號：
2SJ463A
PDF描述：
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHI...
文件大?。?/label>
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PDF頁數：
8頁
芯片廠家：
NEC

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ463A

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DESCRIPTION

The 2SJ463A is a switching device which can be driven directly

by a 2.5 V power source.

The 2SJ463A has excellent switching characteristics, and is

suitable for use as a high-speed switching device in digital circuits.

Package Drawings (unit: mm)

0.3

+0.1

鈥?

2.0 鹵0.2

0.65 0.65

2.1 鹵0.1

1.25 鹵0.1

鈥?Can be driven by a 2.5 V power source.

0.3

鈥?Low Gate Cut-off Voltage.

Marking

ABSOLUTE MAXIMUM RATINGS (T

= 25

擄

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

DSS

GSS

D(DC)

D(pulse)

stg

鈥?0

+20

+0.1

+0.4

Note

擄C

0.9 鹵0.1

150

鈥?5 to +150

Equivalent Circuit

Drain

Electrode

Connection

1. Source

2. Gate

3. Drain

Internal Diode

Note

鈮?/div>

碌

s, Duty Cycle

鈮?/div>

1 %

Gate

Gate Protect

Diode

Source

Marking : H21

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

Document No. D11198EJ1V0DS00 (1st edition)

Date Published September 1996 P

Printed in Japan

0 to 1.1

漏

0.15

+0.1

鈥?.05

0.3

+0.1

鈥?

FEATURES

1996

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