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2SJ462 Datasheet

  • 2SJ462

  • P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHI...

  • 6頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ462
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ462 is a switching device which can be driven directly
by an IC operating at 3 V.
The 2SJ462 features a low on-state resistance and can be
driven by a low voltage power source, so it is suitable for applica-
tions such as power management.
Package Drawings (unit : mm)
5.7 鹵0.1
2.0 鹵0.2
1.5 鹵0.1
3.65 鹵0.1
FEATURES
1.0
1
0.5 鹵0.1
2
3
鈥?Can be driven by a 2.5 V power source.
鈥?New-type compact package.
Has advantages of packages for small signals and for power
transistors, and compensates those disadvantages.
鈥?Low on-state resistance.
R
DS(ON)
: 0.29
鈩?/div>
MAX. @V
GS
= 鈥?.5 V, I
D
= 鈥?.5 A
R
DS(ON)
: 0.19
鈩?/div>
MAX. @V
GS
= 鈥?.0 V, I
D
= 鈥?.0 A
0.5 鹵0.1
2.1
0.4 鹵0.05
0.85 鹵0.1
4.2
Equivalent Circuit
Electrode
Connection
1. Source
2. Drain
3. Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= +25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
鈥?2
鹵8.0
鹵2.5
鹵5.0*
2.0**
150
鈥?5 to +150
V
V
A
A
W
藲
C
藲
C
Gate Protect
Diode
Gate
Drain
Internal Diode
Source
Marking : UA3
*
PW
鈮?/div>
10 ms, Duty Cycle
鈮?/div>
1 %
**
Mounted on ceramic board of 7.5 cm
2
脳
0.7 mm
Document No. D11449EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
5.4 鹵0.25
0.55
漏
1996

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