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2SJ448 Datasheet

  • 2SJ448

  • SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ448
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ448 is P-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 鹵0.3
4.5 鹵0.2
3.2 鹵0.2
2.7 鹵0.2
FEATURES
鈥?/div>
Low On-Resistance
R
DS(on)
= 2.0
鈩?/div>
MAX. (@ V
GS
= 鈥?0 V, I
D
= 鈥?.0 A)
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
15.0 鹵0.3
3 鹵0.1
4 鹵0.2
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
鈥?50
m
25
m
4.0
m
16
V
V
A
A
W
W
藲C
1 2 3
0.7 鹵0.1
2.54
13.5
MIN.
12.0 鹵0.2
Low C
iss
C
iss
= 470 pF TYP.
1.3 鹵0.2
1.5 鹵0.2
2.54
0.65 鹵0.1
2.5 鹵0.1
Total Power Dissipation (T
c
= 25 藲C) P
T1
Total Power Dissipation (T
A
= 25 藲C) P
T2
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1 %
T
ch
T
stg
I
AS
E
AS
30
2.0
150
鈥?.0
80
1. Gate
2. Drain
3. Source
鈥?5 to +150 藲C
A
mJ
MP-45F(ISOLATED TO-220)
Drain
**
Starting T
ch
= 25 藲C, R
G
= 25
鈩?
V
GS
= 鈥?0 V
鈫?/div>
0
Gate
Body
Diode
Gate Protection
Diode
Source
Document No. D10029EJ1V0DS00
Date Published May 1995 P
Printed in Japan
漏
1995

2SJ448相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    LOW FREQUENCY POWER AMPLIFIER
    HITACHI
  • 英文版
    LOW FREQUENCY POWER AMPLIFIER
    HITACHI [H...
  • 英文版
    LOW FREQUENCY POWER AMPLIFIER
    HITACHI
  • 英文版
    LOW FREQUENCY POWER AMPLIFIER
    HITACHI [H...
  • 英文版
    Ultrahigh-Speed Switching Applications
    SANYO
  • 英文版
    Ultrahigh-Speed Switching Applications
    SANYO [San...
  • 英文版
    P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-D...
    TOSHIBA
  • 英文版
    P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-D...
    TOSHIBA [T...
  • 英文版
    P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-D...
    TOSHIBA
  • 英文版
    P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-D...
    TOSHIBA [T...
  • 英文版
    TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 5A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | ...
    ETC
  • 英文版
    P- Channel Silicon MOS FET Very High-Speed Switching Applica...
    SANYO
  • 英文版
    P- Channel Silicon MOS FET Very High-Speed Switching Applica...
    SANYO [San...
  • 英文版
    P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURENT SWITCHING, CHOPP...
    TOSHIBA
  • 英文版
    P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURENT SWITCHING, CHOPP...
    TOSHIBA [T...
  • 英文版
    Silicon P-Channel MOS FET
    HITACHI
  • 英文版
    Silicon P-Channel MOS FET
    HITACHI [H...
  • 英文版
    Silicon P-Channel MOS FET
    HITACHI

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