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2SJ411 Datasheet

  • 2SJ411

  • P-CHANNEL SIGNAL MOS FET FOR SWITCHING

  • 6頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ411
P-CHANNEL SIGNAL MOS FET
FOR SWITCHING
The 2SJ411 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for power control switches and DC/DC
converters.
PACKAGE DIMENSIONS (in mm)
7.0 MAX.
1.2
2.0
0.8 鹵0.1
3.0 MAX.
FEATURES
鈥?Radial taping supported
鈥?Can be directly driven by 5-V IC
鈥?Low ON resistance
R
DS(on)
= 0.24
鈩?/div>
MAX. @V
GS
= 鈥? V, I
D
= 鈥?.5 A
R
DS(on)
= 0.11
鈩?/div>
MAX. @V
GS
= 鈥?0 V, I
D
= 鈥?.5 A
0.6 鹵0.1
0.6 鹵0.1
0.6 鹵0.1
1.71.7
0.55 鹵0.1
G D S
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Internal
Diode
4.0 MAX.
1.5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
鈮?/div>
10
碌
s
Duty cycle
鈮?/div>
1 %
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
P
T1
P
T2
T
ch
T
stg
T
A
= 25 藲C
T
C
= 25 藲C
V
GS
= 0
V
DS
= 0
Gate
Source (S)
Protection
Diode
PIN
CONNECTIONS
G: Gate
D: Drain
S: Source
TEST CONDITIONS
RATING
鈥?0
鈥?0/+10
鹵5.0
鹵20.0
12.0 MIN.
UNIT
V
V
A
A
1.0
6.0
150
W
W
藲C
藲C
鈥?5 to +150
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
The information in this document is subject to change without notice.
Document No. D11219EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
9.0 MAX.
1996

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