2SJ406
P- Channel Silicon MOS FET
Very High-Speed Switching Applications
Features and Applications
鈥?Low ON-state resistance.
鈥?Very high-speed switching.
鈥?Low-voltage dreve.
鈥?Micaless package facilitating easy mounting.
Absolute Maximum Ratings / Ta=25擄C
Drain to Source Voltage
Gate to Source Voltage
Drain Current (D.C)
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
PW鈮?0碌S, dutycycle鈮?%
IDP
Tc=25擄C
PD
Tch
Tstg
--200
鹵20
--12
--48
40
150
--55 to +150
unit
V
V
A
A
W
擄C
擄C
min
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(OFF)
| yfs |
RDS(On)1
Ciss
Coss
Crss
td(On)
tr
td(Off)
tf
VSD
ID=--1mA , VGS=0
ID=鹵100碌A(chǔ) , VGS=0
VDS=--200V , VGS=0
VGS=鹵16V
VDS=--10V
VDS=--10V
ID=--5A
VDS=--20V
VDS=--20V
VDS=--20V
,
,
,
,
,
,
,
VDS=0
ID=--1mA
ID=--6A
VGS=--4V
f=1MHz
f=1MHz
f=1MHz
--1.5
6.3
--200
鹵20
--100
鹵10
--2.5
10.5
170
2400
540
260
40
120
720
310
--1.0
230
typ
max
unit
V
V
碌A(chǔ)
碌A(chǔ)
V
S
m鈩?/div>
pF
pF
pF
ns
ns
ns
ns
--1.5
V
TENTATIVE
Electrical Characteristics / Ta=25擄C
Drain to Source Breakdown Voltage
Gate to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
See Specified Test
Circuit .
IS =--1.0A
, VGS = 0
Switching Time Test Circuit
Elecrical Connection
Case Outline
10.0
蠁3.2
TO-220 (unit:mm)
4.5
3.5
7.2
2.8
VDD=--100V
0V
--10V
VIN
VIN
PW=10uS
D.C鈮?%
ID=--6A
RL=--16.7鈩?/div>
VOUT
G
D
18.1
16.0
5.6
1.6
14.0
1.2
0.75
1
2
3
2.55
2.4
2.4
0.7
P.G
50鈩?/div>
2SJ406
S
2.55
2.55
2.55
1 : Gate
2 : Drain
3 : Source
Specifications and information herein are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990929TM2fXHD
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