2SJ401_07 Datasheet

IC型號：
2SJ401_07
PDF描述：
DC−DC Converter, Relay Drive and Motor Drive Applicati...
文件大?。?/label>
785.50KB
PDF頁數(shù)：
6頁
芯片廠家：
TOSHIBA

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2SJ401

TOSHIBA Field Effect Transistor

Silicon P Channel MOS Type (L

鈭捪€鈭扢OSV)

2SJ401

DC鈭扗C Converter, Relay Drive and Motor Drive

Applications

4-V gate drive

Low drain鈭抯ource ON resistance

High forward transfer admittance

Enhancement mode

: R

DS (ON)

= 33 m鈩?(typ.)

: |Y

| = 20 S (typ.)

Unit: mm

Low leakage current : I

DSS

鈭?00 渭A

(max) (V

鈭?0

: V

鈭?.8~鈭?.0

V (V

鈭?0

V, I

鈭?

mA)

Absolute Maximum Ratings

(Ta = 25擄C)

Characteristics

Drain鈭抯ource voltage

Drain鈭抔ate voltage (R

= 20 k鈩?

Gate鈭抯ource voltage

Drain current

(Note 1)

Symbol

DSS

DGR

GSS

stg

Rating

鈭?0

鹵20

鈭?0

100

800

鈭?0

150

鈭?5~150

Unit

擄C

Pulse (Note 1)

Drain power dissipation (Tc = 25擄C)

Single pulse avalanche energy

(Note 2)

Avalanche current

Repetitive avalenche energy (Note 3)

Channel temperature

Storage temperature range

JEDEC

JEITA

TOSHIBA

鈥?/div>

2-10S1B

Weight: 1.5 g (typ.)

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Symbol

th (ch鈭抍)

th (ch鈭抋)

Max

1.25

83.3

Unit

擄C / W

JEDEC

JEITA

TOSHIBA

鈥?/div>

2-10S2B

Note 1: Ensure that the channel temperature does not exceed 150擄C.

Note 2: V

鈭?0

V, T

= 25擄C (initial), L = 1.44 mH, R

= 25

鈩?

鈭?0

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Weight: 1.5 g (typ.)

2006-11-16

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