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2SJ380_07 Datasheet

  • 2SJ380_07

  • Relay Drive, DC-DC Converter and Motor Drive Applications

  • 6頁

  • TOSHIBA

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2SJ380
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (L
2
-蟺-MOSV)
2SJ380
Relay Drive, DC-DC Converter and Motor Drive
Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
4-V gate drive
Low drain-source ON resistance: R
DS (ON)
= 0.15
鈩?/div>
(typ.)
High forward transfer admittance: |Y
fs
| = 7.7 S (typ.)
Low leakage current: I
DSS
=
鈭?00 渭A
(max) (V
DS
=
鈭?00
V)
Enhancement mode: V
th
=
鈭?.8~鈭?.0
V (V
DS
=
鈭?0
V, I
D
=
鈭?
mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k惟)
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
鈭?00
鈭?00
鹵20
鈭?2
鈭?8
35
312
鈭?2
3.5
150
鈭?5~150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
Pulse (Note 1)
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
3.57
62.5
Unit
擄C/W
擄C/W
Note1:
Ensure that the channel temperature does not exceed 150擄C.
Note 2: V
DD
= 鈭?5
V, T
ch
=
25擄C (initial), L
=
2.94 mH, R
G
=
25
惟,
I
AR
= 鈭?2
A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2007-02-01

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