DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ358
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
Package Drawings (unit: mm)
The 2SJ358 is a P-channel vertical MOS FET that can
be used as a switching element. The 2SJ358 can be
directly driven by an IC operating at 5 V.
The 2SJ358 features a low on-resistance and excellent
switching characteristics, and is suitable for applications
such as actuator driver and DC/DC converter.
1
5.7 鹵0.1
2.0 鹵0.2
1.5 鹵0.1
2
3
FEATURES
鈥?New-type compact package
Has advantages of packages for small signals and for
power transistors, and compensates those disadvan-
tages
鈥?Can be directly driven by an IC operating at 5 V.
鈥?Low on-resistance
R
DS(ON)
= 0.40
鈩?/div>
MAX. @V
GS
= 鈥? V, I
D
= 鈥?.5 A
R
DS(ON)
= 0.30
鈩?/div>
MAX. @V
GS
= 鈥?0 V, I
D
= 鈥?.5 A
1.0
0.5 鹵0.1
2.1
0.85 鹵0.1
4.2
0.5 鹵0.1
0.4 鹵0.05
Equivalent Circuit
Drain (D)
Electrode Connection
1. Source
Internal 2. Drain
Diode
3. Gate
Marking: UA2
Gate (G)
Gate Protect
Diode
Source (S)
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
a
= +25 藲C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
鈮?/div>
10 ms
Duty Cycle
鈮?/div>
1 %
Mounted on ceramic board of 7.5 cm
2
脳
0.7 mm
V
GS
= 0
V
DS
= 0
Conditions
Ratings
鈥?0
鈥?0/+10
鈥?+3.0
鈥?+6.0
Unit
V
V
A
A
Total Power Loss
Channel Temperature
Storage Temperature
P
T
T
ch
T
stg
3.65 鹵0.1
0.55
2.0
150
鈥?5 to +150
5.4 鹵0.25
W
藲C
藲C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Document No. TC-2491
(O.D. No. TC-8011)
Date Published October 1994 P
Printed in Japan
漏
1994
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