DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ353
P-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SJ353 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
converters.
characteristics and is ideal for driving the actuators and DC/DC
PACKAGE DIMENSIONS (in mm)
7.0 MAX.
2.0
1.2
9.0 MAX.
0.55 鹵0.1
4.0 MAX.
12.0 MIN.
0.8 鹵0.1
0.6 鹵0.1
FEATURES
鈥?Radial taping supported
鈥?Can be directly driven by output of 5-V IC
鈥?Low ON resistance
R
DS(on)
= 0.68
鈩?/div>
MAX. @V
GS
= 鈥? V, I
D
= 鈥?.8 A
R
DS(on)
= 0.37
鈩?/div>
MAX. @V
GS
= 鈥?0 V, I
D
= 鈥?.0 A
0.6 鹵0.1
0.6 鹵0.1
1.7
1.7
GD S
EQUIVALENT CIRCUIT
Drain (D)
1.5
Gate (G)
Gate
protection
diode
Source (S)
3.0 MAX.
Internal
diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
鈮?/div>
10 ms,
Duty cycle
鈮?/div>
1 %
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
鈥?0
鹵20/+10
鹵1.5
鹵3.0
UNIT
V
V
A
A
Total Power Dissipation
Channel Temperature
Storage Temperature
P
T
T
ch
T
stg
1.0
150
鈥?5 to +150
W
藲C
藲C
Document No. D11216EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
漏
1996
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