2SJ338
TOSHIBA Field Effect Transistor
Silicon P-Channel MOS Type
2SJ338
Audio-Frequency Power Amplifier Applications
High breakdown voltage
High forward transfer admittance
Complementary to 2SK2162
: V
DSS
=
鈭?80
V
: |Y
fs
| = 0.7 S (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristic
Drain鈭抯ource voltage
Gate鈭抯ource voltage
Drain current
(Note 1)
Symbol
V
DSS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
鈭?80
鹵20
鈭?
20
150
鈭?5~150
Unit
V
V
A
W
擄C
擄C
Power dissipation (Tc = 25擄C)
Channel temperature
Storage temperature range
Note 1: Ensure that the channel temperature does not exceed 150擄C.
Note 2:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?Derating Concept and Methods) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-64
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-64
2-7J1B
Weight: 0.36 g (typ.)
1
2006-11-16
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