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2SJ313_07 Datasheet

  • 2SJ313_07

  • Audio Frequency Power Amplifier Application

  • 5頁

  • TOSHIBA

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2SJ313
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type
2SJ313
Audio Frequency Power Amplifier Application
High breakdown voltage: V
DSS
=
鈭?80
V
High forward transfer admittance: |Y
fs
| = 0.7 S (typ.)
Complementary to 2SK2013
Unit: mm
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain鈭抯ource voltage
Gate鈭抯ource voltage
Drain current
(Note 1)
Symbol
V
DSS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
鈭?80
鹵20
鈭?
25
150
鈭?5~150
Unit
V
V
A
W
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-67
2-10R1B
Power dissipation (Tc = 25擄C)
Channel temperature
Storage temperature range
Weight: 1.9 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2006-11-16

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