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2SJ312_07 Datasheet

  • 2SJ312_07

  • DC−DC Converter, Relay Drive and Motor Drive Applicati...

  • 6頁

  • TOSHIBA

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2SJ312
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type (L
鈭捪€鈭扢OSIV)
2
2SJ312
DC鈭扗C Converter, Relay Drive and Motor Drive
Applications
4-V gate drive
Low drain鈭抯ource ON resistance
High forward transfer admittance
Enhancement mode
: R
DS (ON)
= 80 m鈩?(typ.)
: |Y
fs
| = 8.0 S (typ.)
Unit: mm
Low leakage current : I
DSS
=
鈭?00 渭A
(max) (V
DS
=
鈭?0
V)
: V
th
=
鈭?.8~鈭?.0
V (V
DS
=
鈭?0
V, I
D
=
鈭?
mA)
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain鈭抯ource voltage
Drain鈭抔ate voltage (R
GS
= 20 k鈩?
Gate鈭抯ource voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
鈭?0
鈭?0
鹵20
鈭?4
鈭?6
40
150
鈭?5~150
Unit
V
V
V
A
W
擄C
擄C
Pulse (Note 1)
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-10S1B
Drain power dissipation (Tc = 25擄C)
Channel temperature
Storage temperature range
Weight: 1.5 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch鈭抍)
R
th (ch鈭抋)
Max
3.125
83.3
Unit
擄C / W
擄C / W
JEDEC
Note 1: Ensure that the channel temperature does not exceed 150擄C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-10S2B
Weight: 1.5 g (typ.)
1
2006-11-16

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