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2SJ305_07 Datasheet

  • 2SJ305_07

  • High Speed Switching Applications Analog Applications

  • 5頁

  • TOSHIBA

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2SJ305
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type
2SJ305
High Speed Switching Applications
Analog Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
High input impedance
Low gate threshold voltage.: V
th
=
鈭?.5~鈭?.5
V
Excellent switching times.: t
on
= 0.06
渭s
(typ.)
t
off
= 0.15
渭s
(typ.)
Low drain-source ON resistance: R
DS (ON)
= 2.4
鈩?/div>
(typ.)
Small package.
Complementary to 2SK2009
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
鈭?0
鹵20
鈭?00
200
150
鈭?5~150
Unit
V
V
mA
mW
擄C
擄C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1F
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Marking
Equivalent Circuit
1
2007-11-01

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