DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ243
P-CHANNEL MOS FET
FOR SWITCHING
The 2SJ243 is a P-channel vertical type MOS FET that is driven
at 2.5 V.
Because this MOS FET can be driven on a low voltage and
because it is not necessary to consider the drive current, the
2SJ243 is ideal for driving the actuator of power-saving systems,
1.6 鹵 0.1
PACKAGE DIMENSIONS (in mm)
0.3 鹵 0.05
0.1
+0.1
鈥?.05
Moreover, the 2SJ243 is housed in a super small mini-mold
package so that it can help increase the mounting density on the
printed circuit board and lower the mounting cost, contributing to
miniaturization of the application systems.
0.8 鹵 0.1
such as VCR cameras and headphone stereo systems.
D
0 to 0.1
G
0.2
+0.1
鈥?
0.5
0.5
0.6
0.75 鹵 0.05
S
FEATURES
鈥?Small mounting area: about 60 % of the conventional mini-mold
package (SC-70)
鈥?Can be directly driven by 3-V IC
鈥?Can be automatically mounted
1.0
1.6 鹵 0.1
EQUIVALENT CIRCUIT
Drain (D)
The internal diode in the right figure is a parasitic diode.
The protection diode is to protect the product from damage
due to static electricity. If there is a danger that an extremely
high voltage will be applied across the gate and source in the
actual circuit, a gate protection circuit such as an external
constant-voltage diode is necessary.
Gate (G)
Gate protection
diode
Source (S)
Internal diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: A1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
鈮?/div>
10 ms
Duty cycle
鈮?/div>
50 %
3.0 cm
2
脳
0.64 mm, ceramic substrate used
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
鈥?0
鹵7
鹵100
鹵200
UNIT
V
A
mA
mA
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
P
T
T
ch
T
opt
T
stg
200
150
鈥?5 to +80
鈥?5 to +150
mW
藲C
藲C
藲C
Document No. D11215EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
1
2
3
4
5
6
